10 GHz WIN GaAs FET MMIC Power Amplifier Design & EM-Verified Layout
EN.525.803 — Special Project: Electrical and Computer Engineering Thesis
01A thesis-level design study investigating whether a 10 GHz X-band two-stage GaAs FET MMIC power amplifier can be effectively realized in a process optimized for higher-frequency operation. Developed in Keysight ADS using the WIN MMIC process library, the project covers device screening, bias network synthesis, driver/output-stage sizing, input/interstage/output matching, harmonic-balance power optimization, wideband stability verification, and ADS Momentum EM co-simulation of layout-sensitive structures. The design targets 18.6 dB small-signal gain, 28.2 dBm P1dB, 29.4 dBm Psat, and 31.5% PAE across a 9.5–10.5 GHz X-band passband, with layout planning and DRC review for a compact industry-style MMIC die implementation.